The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Dec. 03, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Jen-I Lai, Taoyuan, TW;
Chun-Heng Wu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 7/00 (2006.01); B08B 5/00 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02101 (2013.01); B08B 5/00 (2013.01); B08B 7/0021 (2013.01); H01L 21/0206 (2013.01); H01L 21/76224 (2013.01);
Abstract
A method of processing a semiconductor device including following operation is provided. A substrate is provided. The substrate is then processed with a treating solution, in which the treating solution includes liquid carbon dioxide and an additive. The treating solution is then displaced by a supercritical fluid carbon dioxide. The substrate is then dried by transforming the supercritical fluid carbon dioxide to gaseous carbon dioxide.