The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Mar. 01, 2018
Applicant:
Hoya Corporation, Tokyo, JP;
Inventors:
Yohei Ikebe, Tokyo, JP;
Junichi Horikawa, Tokyo, JP;
Takahiro Onoue, Tokyo, JP;
Mizuki Kataoka, Tokyo, JP;
Assignee:
HOYA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/54 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/54 (2013.01); G03F 7/2004 (2013.01);
Abstract
Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).