The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Aug. 24, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Santiago Serrano Guisan, San Jose, CA (US);
Luc Thomas, San Jose, CA (US);
Son Le, Gilroy, CA (US);
Guenole Jan, San Jose, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A ferromagnetic resonance (FMR) measurement system is disclosed with a plurality of 'm' RF probes and one or more magnetic assemblies to enable a perpendicular-to-plane or in-plane magnetic field (H) to be applied simultaneously with a sequence of microwave frequencies (f) at a plurality of 'm' test locations on a magnetic film formed on a whole wafer under test (WUT). A FMR condition occurs in the magnetic film (stack of unpatterned layers or patterned structure) for each pair of (H, f) values. RF input signals are distributed to the RF probes using RF power distribution or routing devices. RF output signals are transmitted through or reflected from the magnetic film to a plurality of “n” RF diodes where 1≤n≤m, and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening at the predetermined test locations.