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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11233121 B1

PDFFull Text
Date of Patent:
Jan. 25, 2022

Filed:

Jun. 15, 2020

Method of making bipolar transistor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fu-Hsiung Yang, Zhongli, TW;

Long-Shih Lin, Zhubei, TW;

Kun-Ming Huang, Taipei, TW;

Chih-Heng Shen, Zhubei, TW;

Po-Tao Chu, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Khaja Ahmad

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0821 (2013.01); H01L 21/02236 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/0804 (2013.01); H01L 29/0834 (2013.01); H01L 29/6625 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01);
Abstract

A bipolar transistor includes a substrate having a first well with a first dopant type; and a split collector region in the substrate, the split collector region including a highly doped central region having the first dopant type, and a lightly doped peripheral region having a second dopant type, opposite the first dopant type, wherein the lightly doped peripheral region surrounds the highly doped central region, a dopant concentration of the lightly doped peripheral region ranges from about 5×10ions/cmto about 5×10ions/cm, and the lightly doped peripheral region has a same maximum depth as the highly doped central region.

Find Patent Forward Citations

Yang, Fu-Hsiung. (2022). Method of making bipolar transistor (U.S. Patent No. 11233121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11233121

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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