The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Jul. 20, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Cheng Chen, Tainan, TW;

Wei-Li Huang, Pingtung, TW;

Chien-Chih Kuo, Tainan, TW;

Hon-Lin Huang, Hsinchu, TW;

Chin-Yu Ku, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01F 41/04 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01F 41/046 (2013.01); H01L 21/76823 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/53204 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The magnetic element has a first edge. The semiconductor device structure also includes an adhesive element between the magnetic element and the semiconductor substrate, and the adhesive element has a second edge. The semiconductor device structure further includes an isolation element extending across the magnetic element. The isolation element partially covers a top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The isolation element has a third edge, and the second edge is closer to the third edge than the first edge. In addition, the semiconductor device structure includes a conductive line over the isolation element.


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