The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Sep. 14, 2020
Nanya Technology Corporation, New Taipei, TW;
Li-Han Lu, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure relates to a method for preparing a semiconductor device with a composite landing pad. The method includes forming a first dielectric layer over a semiconductor substrate. The method also includes forming a barrier layer and a first lower metal plug penetrating through the first dielectric layer and in a cell region. The first lower metal plug is surrounded by the barrier layer. The method further includes depositing a silicon layer over the first dielectric layer, the barrier layer and the first lower metal plug. In addition, the method includes performing a salicide process to form an inner silicide portion over the first lower metal plug and an outer silicide portion over the barrier layer after the silicon layer is formed. The inner silicide portion is surrounded by the outer silicide portion, and a recess is formed over the inner silicide portion.