The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jan. 04, 2019
Ihi Corporation, Koto-ku, JP;
The University of Tokyo, Bunkyo-ku, JP;
Yasuyuki Fukushima, Tokyo, JP;
Kozue Akazaki, Tokyo, JP;
Yasutomo Tanaka, Tokyo, JP;
Kazuma Akikubo, Tokyo, JP;
Takeshi Nakamura, Tokyo, JP;
Yukihiro Shimogaki, Tokyo, JP;
Takeshi Momose, Tokyo, JP;
Noboru Sato, Tokyo, JP;
Kohei Shima, Tokyo, JP;
Yuichi Funato, Tokyo, JP;
IHI Corporation, Koto-ku, JP;
The University of Tokyo, Bunkyo-ku, JP;
Abstract
Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.