The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Jun. 22, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Kuei-Hung Shen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including a logic region and a memory region adjacent to the logic region. The memory region includes a Nmetal layer, a bottom electrode over the Nmetal layer, a magnetic tunneling junction (MTJ) layer over the bottom electrode, a top electrode over the MTJ layer, and a (N+1)metal layer over the top electrode. The top electrode includes material having an oxidation rate lower than that of Tantalum or Tantalum derivatives. N is an integer greater than or equal to 1.