The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Apr. 27, 2021
Applicant:

Chung W. Ho, Taipei, TW;

Inventor:

Chung W. Ho, Taipei, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 23/13 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/13 (2013.01); H01L 23/3185 (2013.01); H01L 23/49894 (2013.01); H01L 24/73 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/73204 (2013.01);
Abstract

A chip carrier and a manufacturing method thereof are provided. The chip carrier includes a first structure layer and a second structure layer. The first structure layer has at least one opening and includes at least one first insulating layer. A thermal expansion coefficient of the first insulating layer is between 2 ppm/° C. and 5 ppm/° C. The second structure layer is disposed on the first structure layer and defines at least one cavity with the first structure layer. The second structure layer includes at least one second insulating layer, and a thermal expansion coefficient of the second insulating layer is equal to or greater than the thermal expansion coefficient of the first insulating layer.


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