The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Jan. 28, 2020
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Robert James Montgomery, Nijmegen, NL;

Ricardo Lagmay Yandoc, Nijmegen, NL;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 23/4951 (2013.01); H01L 24/05 (2013.01); H03K 17/107 (2013.01); H03K 17/687 (2013.01); H01L 2924/13064 (2013.01);
Abstract

This disclosure relates to a discrete semiconductor device and associated method of manufacture, the discrete semiconductor device includes: a high voltage depletion mode device die; and a low voltage enhancement mode device die connected in cascode configuration with the high voltage depletion mode device die. The high voltage depletion mode device includes a gate, source and drain terminals arranged on a first surface thereof and the gate source and drain terminals are inverted with respect to the low voltage enhancement mode device die and the low voltage device is arranged adjacent to the high voltage device.


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