The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Jan. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Chen, Taichung, TW;

Sung-Feng Yeh, Taipei, TW;

Jian-Wei Hong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01); H01L 21/463 (2006.01); H01L 25/065 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/463 (2013.01); H01L 21/56 (2013.01); H01L 21/76804 (2013.01); H01L 23/3121 (2013.01); H01L 23/544 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01);
Abstract

A package includes a semiconductor carrier, a first die, a second die, a first encapsulant, a second encapsulant, a first through insulating via (TIV), and a second TIV. The semiconductor carrier has a contact via embedded therein. The contact via is electrically grounded. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The second encapsulant laterally encapsulates the second die. The first TIV is aside the first die. The first TIV penetrates through the first encapsulant and is electrically connected to the contact via. The second TIV is aside the second die. The second TIV penetrates through the second encapsulant and is electrically connected to the contact via and the first TIV.


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