The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Jun. 25, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jian Qiang Liu, Beijing, CN;
Chao Tian, Beijing, CN;
Zi Rui Liu, Beijing, CN;
Ching Yun Chang, Beijing, CN;
Ai Ji Wang, Beijing, CN;
Abstract
Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having an opening and forming a first gate layer in the opening. The first gate layer closes a top of the opening and includes a void. The method also includes forming a second gate layer on the first gate layer. An atomic radius of a material of the second gate layer is smaller than gaps among the atoms of the material of the first gate layer. Further, the method includes performing a thermal annealing process to cause atoms of the material of the second layer to pass through the first gate layer to fill the void.