The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Mar. 30, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Jung Tang, Tainan, TW;
Yu-Jen Liu, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28176 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66871 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate; forming an inter-metal dielectric (IMD) layer on the metal gate; forming a metal interconnection in the IMD layer; and performing a high pressure anneal (HPA) process for improving work function variation of the metal gate.