The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Sep. 26, 2019
Applicant:
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Hubei, CN;
Inventor:
Hongsheng Yi, Hubei, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B24B 7/22 (2006.01); H01L 21/687 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02013 (2013.01); B24B 7/228 (2013.01); H01L 21/02016 (2013.01); H01L 21/68742 (2013.01); H01L 22/26 (2013.01);
Abstract
A wafer thinning method and a wafer structure are provided. In the wafer thinning method, a to-be-thinned wafer is provided, and the to-be-thinned wafer is grinded on a rear surface of the to-be-thinned wafer. Then, a first planarization process is performed on a rear surface of the grinded wafer to restore surface flatness of the grinded wafer, and a second planarization process is performed on a rear surface of the wafer obtained after the first planarization process is performed until a target thinned thickness is reached.