The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Jun. 20, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zhe Song, Boise, ID (US);
Tuman E. Allen, Kuna, ID (US);
Cole S. Franklin, Boise, ID (US);
Dan Gealy, Kuna, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 27/24 (2006.01); H01L 21/033 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 45/1691 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/02362 (2013.01); H01L 21/0337 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 27/2409 (2013.01); H01L 27/249 (2013.01); H01L 27/2427 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01);
Abstract
A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.