The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Jan. 28, 2020
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventor:
Steven Peake, Nijmegen, NL;
Assignee:
Nexperia B.V., Nijmegen, NL;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract
This disclosure relates to a power semiconductor device and a method of manufacturing the same, including: a semiconductor layer defining a first major surface and a drift region and a trench extending from the first major surface into the semiconductor layer. The trench includes a gate electrode surrounded by a gate dielectric configured and arranged to electrically isolate the gate electrode from the semiconductor layer; and a source region extending from the first major surface and abutting a top side-wall portion of the trench, and the source region extends to a depth corresponding to a top surface of the gate electrode.