The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Feb. 26, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Keiko Kawamura, Yokohama Kanagawa, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Yoko Iwakaji, Meguro Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes first and second electrodes. A first-type layer is between the first and second electrodes. A pair of first gate electrodes is between the first and second electrodes and each is surrounded by a gate insulating film. Second gate electrodes are disposed between the pair of first gate electrodes. A second-type layer is on the first-type layer in a first region between a first gate electrode and one of the second gate electrodes. Another first-type layer is on the second-type layer. This other first-type layer is directly adjacent to the gate insulating film. Another second-type layer is on the other second-type layer. A width of the first-type layer between adjacent second gate electrodes is less than a length of the first-type layer in the region between adjacent second gate electrodes.