The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Apr. 22, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Daniel Jenner Lichtenwalner, Raleigh, NC (US);

Brett Hull, Raleigh, NC (US);

Edward Robert Van Brunt, Raleigh, NC (US);

Shadi Sabri, Cary, NC (US);

Matt N. McCain, Raleigh, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 29/0653 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.


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