The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
May. 15, 2019
Micron Technology, Inc., Boise, ID (US);
Mihir Bohra, Boise, ID (US);
Tarun Mudgal, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include a method of forming an arrangement. A first tier is formed to include CMOS circuitry. A second tier is formed to include an assembly which has first and second sets of memory cells on opposing sides of a coupling region. A support material is adjacent the first and second sets of the memory cells, and an intervening material is adjacent the support material. The support material has a different composition than the intervening material. A conductive interconnect extends through the intervening material. An upper surface of the assembly is polished to reduce an overall height of the assembly. The support material provides support during the polishing to protect the memory cells from being eroded during the polishing. The conductive interconnect of the second tier is coupled with the CMOS circuitry of the first tier. Some embodiments include multitier arrangements.