The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Mar. 30, 2020
Applicant:
Tessera, Inc., San Jose, CA (US);
Inventors:
Daniel C. Edelstein, White Plains, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
Tessera, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/02164 (2013.01); H01L 21/7684 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76864 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 21/288 (2013.01); H01L 2221/1094 (2013.01);
Abstract
A device relates to a semiconductor device. The semiconductor device includes a narrow-line bamboo microstructure integrated within a metal layer of the semiconductor device and a narrow-line polycrystalline microstructure. The narrow-line polycrystalline microstructure is integrated within the same metal layer as the narrow-line bamboo microstructure.