The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Aug. 26, 2019
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
James Alan Pixley, Dover, NH (US);
Eric D. Hermanson, Georgetown, MA (US);
Philip Layne, Salem, MA (US);
Lyudmila Stone, Lynnfield, MA (US);
Thomas Stacy, Beverly, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01L 21/0203 (2013.01); H01L 21/76859 (2013.01); H01J 37/32412 (2013.01);
Abstract
Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.