The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Mar. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngtak Kim, Hwaseong-si, KR;

Sangjine Park, Suwon-si, KR;

Wonjun Lee, Seoul, KR;

Hyeyeong Seo, Hwaseong-si, KR;

Jaeuk Shin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/1666 (2013.01);
Abstract

A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.


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