The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Jan. 14, 2020
Applicant:

Ciena Corporation, Hanover, MD (US);

Inventors:

François Pelletier, Saint-Michel, CA;

Sean Sebastian O'Keefe, Dunrobin, CA;

Christine Latrasse, Quebec, CA;

Yves Painchaud, Quebec, CA;

Assignee:

Ciena Corporation, Hanover, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 27/1446 (2013.01);
Abstract

Fabricating a photonic integrated circuit includes fabricating structures in one or more silicon layers. At least a first silicon layer comprises: one or more photonic structures, where the photonic structures include one or more waveguides and one or more photodetectors, and one or more light absorbing structures, where at least some of the light absorbing structures include doped silicon. Fabricating the photonic integrated circuit also includes fabricating at least one waveguide in the photonic integrated circuit for receiving light into at least one of the silicon layers.


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