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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11217588 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

Jul. 03, 2019

Integrated assemblies comprising voids between active regions and conductive shield plates, and methods of forming integrated assemblies

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Mitsunari Sukekawa, Hiroshima, JP;

Hiroaki Taketani, Hiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/764 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 21/31111 (2013.01); H01L 21/764 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 27/10852 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01); H01L 28/60 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/402 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

Some embodiments include integrated memory having a wordline, a shield plate, and an access device. The access device includes first and second diffusion regions, and a channel region. The channel region is vertically disposed between the first and second diffusion regions. The access device is adjacent to the wordline and to the shield plate. A part of the wordline is proximate a first side surface of the channel region with an intervention of a first insulating region therebetween. A part of the shield plate is proximate a second side surface of the channel region with an intervention of a second insulating region therebetween. The first insulating region includes an insulative material. The second insulating region includes a void. Some embodiments include memory arrays. Some embodiments include methods of forming integrated assemblies.

Find Patent Forward Citations

Sukekawa, Mitsunari. (2022). Integrated assemblies comprising voids between active regions and conductive shield plates, and methods of forming integrated assemblies (U.S. Patent No. 11217588). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11217588

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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