The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jul. 31, 2020
Western Digital Technologies, Inc., San Jose, CA (US);
Bhagwati Prasad, San Jose, CA (US);
Derek Stewart, Livermore, CA (US);
Bruce Terris, Sunnyvale, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal, a magnesium oxide dielectric layer located between the first and second texture-breaking nonmagnetic layers, a reference layer located between the first and second texture-breaking nonmagnetic layers, a free layer located between the first and second texture-breaking nonmagnetic layers, and a spinel layer located between the reference layer and the free layer, and including a polycrystalline spinel material having (001) texture along an axial direction extending between the reference layer and the free layer.