The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Jan. 21, 2019
Applicant:

Zeon Corporation, Tokyo, JP;

Inventor:

Manabu Hoshino, Tokyo, JP;

Assignee:

ZEON CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); G03F 7/039 (2006.01); C08F 212/08 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/039 (2013.01); C08F 212/08 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01);
Abstract

A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), Ris an organic group including 3 to 7 fluorine atoms. In formula (II), Ris a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, Ris a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.


Find Patent Forward Citations

Loading…