The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Mar. 26, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Takahito Umehara, Iwate, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/44 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4404 (2013.01); C23C 16/0209 (2013.01); C23C 16/0227 (2013.01); C23C 16/40 (2013.01); C23C 16/401 (2013.01); C23C 16/4405 (2013.01); C23C 16/45551 (2013.01); H01L 21/67028 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract
A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.