The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jan. 23, 2020
Hangzhou Silan Integrated Circuit Co., Ltd., Hangzhou, CN;
Hangzhou Silan Microelectronics Co., Ltd., Hangzhou, CN;
Yongxiang Wen, Hangzhou, CN;
Fuhe Sun, Hangzhou, CN;
Chen Liu, Hangzhou, CN;
Wenchao Jin, Hangzhou, CN;
Wenliang Sun, Hangzhou, CN;
HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD., Hangzhou, CN;
HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou, CN;
Abstract
A MEMS microphone and a manufacturing method thereof. The method comprises: sequentially forming a first isolation layer, a diaphragm, and a second isolation layer on a substrate; sequentially forming a first protective layer, a backplate electrode, and a second protective layer on the second isolation layer; forming a release hole penetrating through the first protective layer, the backplate electrode, and the second protective layer; forming an acoustic cavity penetrating through the substrate; releasing the diaphragm through the acoustic cavity and the release hole; and forming a groove on a surface of the first isolation layer, wherein the diaphragm conformally covers the surface of the first isolation layer, thereby forming a spring structure at a position of the groove.