The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Aug. 28, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yohei Yasuda, Yokohama Kanagawa, JP;

Hidefumi Kushibe, Kamakura Kanagawa, JP;

Toshihiro Yagi, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/16 (2013.01); H03F 3/45376 (2013.01); H03F 3/45632 (2013.01);
Abstract

According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.


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