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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11211549 B1

PDFFull Text
Date of Patent:
Dec. 28, 2021

Filed:

Jul. 17, 2020

Integrated circuit and method for manufacturing the same

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chang-Lin Yang, Hsinchu, TW;

Chung-Te Lin, Tainan, TW;

Han-Ting Tsai, Kaoshiung, TW;

Chien-Hua Huang, Miaoli County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Tu-Tu V Ho

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/12 (2013.01);
Abstract

An integrated circuit includes a substrate, a dielectric layer over the substrate, a plurality of cells, a plurality of spacers and a plurality of conductive particles. Each of the cells includes a bottom portion in the dielectric layer and an upper portion protruding from the dielectric layer. The spacers are disposed over the dielectric layer and partially cover the upper portions of the cells, respectively. The spacers are disconnected from each other, and cover a first area of the dielectric layer and expose a second area of the dielectric layer. The conductive particles are disposed between the first area of the dielectric layer and the spacers.

Find Patent Forward Citations

Yang, Chang-Lin. (2021). Integrated circuit and method for manufacturing the same (U.S. Patent No. 11211549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11211549

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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