The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Feb. 05, 2020
Toshiba Materials Co., Ltd., Yokohama, JP;
Meijo University, Nagoya, JP;
Ryosuke Hiramatsu, Kanagawa, JP;
Atsuya Sasaki, Kanagawa, JP;
Hideaki Hirabayashi, Kanagawa, JP;
Satoshi Kamiyama, Aichi, JP;
TOSHIBA MATERIALS CO., LTD., Yokohama, JP;
MEIJO UNIVERSITY, Nagoya, JP;
Abstract
A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01≤O/O≤0.5 is satisfied, where O(at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O(at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.