The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Sep. 16, 2019
Toshiba Materials Co., Ltd., Yokohama, JP;
Meijo University, Nagoya, JP;
Satoshi Kamiyama, Nagoya, JP;
Atsuya Sasaki, Yokohama Kanagawa, JP;
Ryosuke Hiramatsu, Yokohama Kanagawa, JP;
Hideaki Hirabayashi, Yokohama Kanagawa, JP;
TOSHIBA MATERIALS CO., LTD., Yokohama, JP;
MEIJO UNIVERSITY, Nagoya, JP;
Abstract
A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.