The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jan. 13, 2020
Cambridge Gan Devices Limited, Cambourne, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambourne, GB;
Abstract
A heterojunction device, includes a substrate; a III-nitride semiconductor region located longitudinally above or over the substrate and including a heterojunction having a two-dimensional carrier gas; first and second laterally spaced terminals operatively connected to the semiconductor; a gate structure of first conductivity type located above or longitudinally over the semiconductor region and laterally spaced between the first and second terminals; a control gate terminal operatively connected to the gate structure, a potential applied to the control gate terminal modulates and controls a current flow through the carrier gas between the terminals, the carrier gas being a second conductivity type; an injector of carriers of the first conductivity type laterally spaced away from the second terminal; and a floating contact layer located over the carrier gas and laterally spaced away from the second terminal and operatively connected to the injector and the semiconductor region.