The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jun. 28, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method of forming a method of forming a semiconductor device includes providing a semiconductor structure, etching back each gate structure of a plurality of gate structures to form an opening, forming a barrier layer over the dielectric layer, forming a sacrificial layer over the barrier layer, planarizing the sacrificial layer till a surface of the sacrificial layer is substantially flat, and using a gas cluster ion beam (GCIB) process to planarize the sacrificial layer and the barrier layer, and to remove the sacrificial layer and to provide a planarized barrier layer. The semiconductor structure includes a semiconductor substrate, a fin, the plurality of gate structures, and a dielectric layer over the semiconductor substrate between adjacent gate structures. A top of the dielectric layer is coplanar with a top of each of the plurality of gate structures.