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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11211460 B1

PDFFull Text
Date of Patent:
Dec. 28, 2021

Filed:

Sep. 21, 2020

2d crystal hetero-structures and manufacturing methods thereof

Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Shih-Yen Lin, Tainan, TW;

Si-Chen Lee, Taipei, TW;

Samuel C. Pan, Hsinchu, TW;

Kuan-Chao Chen, Tainan, TW;

Assignees:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

NATIONAL TAIWAN UNIVERSITY, Taipei, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Mouloucoulaye Inoussa

Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 31/032 (2006.01); H01L 29/15 (2006.01); H01L 31/0352 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 31/109 (2006.01); H01L 21/20 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/02485 (2013.01); H01L 21/02494 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/02658 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 29/1054 (2013.01); H01L 29/158 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 31/0324 (2013.01); H01L 31/03529 (2013.01); H01L 31/109 (2013.01); H01L 2221/6835 (2013.01);
Abstract

A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.

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