The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

May. 13, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Ming-Chih Hsu, Taichung, TW;

Yi-Hao Chien, Taichung, TW;

Huang-Nan Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 23/5283 (2013.01); H01L 27/1085 (2013.01);
Abstract

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, bit lines disposed on the dielectric layer, spacers and a contact. The substrate has active areas arranged in parallel with each other. The bit lines are arranged in parallel with each other. Each bit line is partially overlapped with the corresponding active area. Each bit line has first portions and second portions arranged alternately in an extending direction thereof, and a width of the first portions is smaller than that of the second portions. The spacers are disposed on the sidewalls of each bit line. The contact is disposed between the adjacent bit lines and adjacent to the corresponding first portion of at least one of the adjacent bit lines, penetrates through the dielectric layer, and is in contact with the corresponding active area.


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