The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jun. 02, 2020
Intel Corporation, Santa Clara, CA (US);
Khaled Ahmed, Anaheim, CA (US);
Anup Pancholi, Hillsboro, OR (US);
John Heck, Berkeley, CA (US);
Thomas Sounart, Chandler, AZ (US);
Harel Frish, Albuquerque, NM (US);
Sansaptak Dasgupta, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.