The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Nov. 24, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Yasushi Matsubara, Isehara, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); G06F 12/14 (2006.01); G11C 8/08 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2257 (2013.01); G06F 12/1425 (2013.01); G11C 8/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

Methods, systems, and devices for protecting stored data in a memory device are described. In one example, a memory device may include a set of memory cells coupled with a digit line and a plate line. A method of operating the memory device may include performing an access operation on a selected memory cell of the set of memory cells, and performing an equalization operation on a non-selected memory cell of the plurality of memory cells based on performing the access operation. The equalization operation may include applying an equal voltage to opposite terminals of the non-selected memory cell via the digit line and the plate line, which may allow built-up charge, such as leakage charge resulting from the access operation, to dissipate. Such an equalization operation may reduce a likelihood of memory loss in non-selected memory cells after access operations.


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