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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11209728 B1

PDFFull Text
Date of Patent:
Dec. 28, 2021

Filed:

Jan. 22, 2019

Mask and method for fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Huang-Ming Wu, Hsinchu, TW;

Jiun-Hao Lin, Hsinchu, TW;

Jia-Guei Jou, New Taipei, TW;

Chi-Ta Lu, Yilan County, TW;

Chi-Ming Tsai, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 1/36 (2012.01); G03F 7/26 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G03F 1/42 (2013.01); G03F 1/36 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/26 (2013.01); G06F 30/398 (2020.01);
Abstract

Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.

Find Patent Forward Citations

Wu, Huang-Ming. (2021). Mask and method for fabricating the same (U.S. Patent No. 11209728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11209728

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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