The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

Mar. 05, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Shuen-Hsiang Ke, Changhua, TW;

Shih-Chieh Lin, Puzi, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/308 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/02362 (2013.01); H01L 21/0337 (2013.01); H01L 21/308 (2013.01); H01L 21/4885 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01);
Abstract

A method for forming a semiconductor memory structure includes forming a hard mask layer over a semiconductor substrate, etching the hard mask layer to form first mask patterns and second mask patterns, transferring the first and second mask patterns to the substrate to form semiconductor blocks, and thinning down the second mask element. After thinning down the second mask element, the thickness of the second mask elements is less than the thickness of the first mask elements. The method also includes forming a first capping layer to laterally extend over the first mask patterns and the second mask patterns, and etching the first capping layer and the second mask pattern to form contact openings.


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Ke, Shuen-Hsiang. (2021). Method for forming a semiconductor memory structure (U.S. Patent No. 11205574). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11205574

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