The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

Jul. 12, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Stefan Frederik Schippers, Peschiera del Garda, IT;

Christophe Vincent Antoine Laurent, Agrate Brianza, IT;

Corrado Villa, Sovico, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/3296 (2019.01); G11C 11/4074 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 1/3296 (2013.01); G11C 11/406 (2013.01);
Abstract

Methods, systems, and devices for power domain switches for switching power reduction are described. A device, such as a memory device, may receive an indication (e.g., a command) for a power domain component of the device to transition between states. The device may float first and second gate drivers. A pass gate may be used to connect (e.g., short) the first switch to the second switch. The pass gate may be deactivated to isolate the gates. The first and second gate drivers may be enabled, and the first and second gate drivers drive the first and second switches to disconnect the power domain component from a power source to deactivate the power domain component, or connect to the power source to activate the power domain component. The energy to switch between active and inactive states may thereby be reduced.


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