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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11203703 B1

PDFFull Text
Date of Patent:
Dec. 21, 2021

Filed:

Jan. 15, 2019

Polishing slurry and method of polishing substrate by using the polishing slurry

Applicants:

Samsung Display Co., Ltd., Yongin-si, KR;

Ubmaterials Inc., Yongin-si, KR;

Inventors:

Hyunjin Cho, Yongin-si, KR;

Joonhwa Bae, Yongin-si, KR;

Byoungkwon Choo, Yongin-si, KR;

Woojin Cho, Yongin-si, KR;

Jinhyung Park, Yongin-si, KR;

Assignees:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

UB MATERIALS INC., Yongin-si, KR;

Attorney:

Kile Park Reed & Houtteman PLLC

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/306 (2006.01); H01L 21/302 (2006.01); C09K 3/14 (2006.01); C09G 1/04 (2006.01); C09G 1/02 (2006.01); C09G 1/00 (2006.01); B24B 37/04 (2012.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09K 3/14 (2013.01); C09K 3/1409 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); H01L 21/302 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01);
Abstract

A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

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