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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11201282 B1

PDFFull Text
Date of Patent:
Dec. 14, 2021

Filed:

Jun. 05, 2020

Magnetic memory structure and device

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Dan Yu, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Attorney:

Anova Law Group, PLLC

Primary Examiner:

Tan T Nguyen

Int. Cl.
CPC ...
H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Magnetic memory devices and methods are provided. In one aspect, a memory device may comprise a control circuitry and at least one array of memory structures. Each memory structure may comprise a metal layer and a first magnetic tunnel junction (MTJ) disposed on the metal layer. The metal layer may include a first region and a second region. Electrical resistivity of at least a first part of the first region is different from electrical resistivity of the second region. The first magnetic tunnel junction (MTJ) may comprise a first free layer adjacent to the metal layer, a first barrier layer adjacent to the first free layer, and a first reference layer adjacent to the first barrier layer. The first free layer is in contact with the first region of the metal layer.

Find Patent Forward Citations

Yu, Dan. (2021). Magnetic memory structure and device (U.S. Patent No. 11201282). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11201282

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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