The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Apr. 22, 2020
Hubei University, Hubei, CN;
Wuhan Ruilian Zhichuang Optoelectronic CO Ltd., Hubei, CN;
Yunbin He, Hubei, CN;
Mingkai Li, Hubei, CN;
Pan Huang, Hubei, CN;
Qile Wang, Hubei, CN;
Yinmei Lu, Hubei, CN;
Gang Chang, Hubei, CN;
Pai Li, Hubei, CN;
HUBEI UNIVERSITY, Hubei, CN;
Abstract
A (GaMe)Oternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)Oternary alloy material of the present invention is formed by solid solution of GaOand MeOin a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)Oternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of MeOis higher than that of GaO, and Gaions in GaOare partially replaced by Meions to obtain a higher band gap (GaMe)Oternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.