The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

May. 13, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joel P. de Souza, Putnam Valley, NY (US);

Babar Khan, Ossining, NY (US);

Arvind Kumar, Chappaqua, NY (US);

Yun Seog Lee, Seoul, KR;

Ning Li, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/207 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); G11C 11/54 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); G11C 11/54 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/167 (2013.01); H01L 29/207 (2013.01); H01L 29/66522 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01);
Abstract

Embodiments of the invention are directed to a resistive switching device (RSD). A non-limiting example of the RSD includes a fin-shaped element formed on a substrate, wherein the fin-shaped element includes a source region, a central channel region, and a drain region. A gate is formed over a top surface and sidewalls of the central channel region. The fin-shaped element is doped with impurities that generate interstitial charged particles configured to move interstitially through a lattice structure of the fin-shaped element under the influence of an electric field applied to the RSD.


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