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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11201231 B1

PDFFull Text
Date of Patent:
Dec. 14, 2021

Filed:

Nov. 14, 2019

Silicon germanium alloy fins with reduced defects

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Hong He, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Steven J. Meyers

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 21/322 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0243 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/18 (2013.01); H01L 21/322 (2013.01); H01L 21/324 (2013.01); H01L 21/3221 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01);
Abstract

A silicon germanium alloy is formed on sidewall surfaces of a silicon fin. An oxidation process or a thermal anneal is employed to convert a portion of the silicon fin into a silicon germanium alloy fin. In some embodiments, the silicon germanium alloy fin has a wide upper portion and a narrower lower portion. In such an embodiment, the wide upper portion has a greater germanium content than the narrower lower portion. In other embodiments, the silicon germanium alloy fin has a narrow upper portion and a wider lower portion. In this embodiment, the narrow upper portion of the silicon germanium alloy fin has a greater germanium content than the wider lower portion of the silicon germanium alloy fin.

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