The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Apr. 22, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Shuai Zhang, Shanghai, CN;

Lian-Jie Li, Shanghai, CN;

Zhong-Hao Chen, Shanghai, TW;

Feng Han, Shanghai, CN;

Jian Wu, Shaghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/41741 (2013.01); H01L 29/66734 (2013.01); H01L 29/7809 (2013.01); H01L 29/7813 (2013.01); H01L 21/2253 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 29/66727 (2013.01);
Abstract

A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.


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