The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Mar. 31, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hsiung Lee, Hsinchu, TW;

Shaw-Hung Ku, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11521 (2017.01); H01L 27/11556 (2017.01); H01L 21/28 (2006.01); H01L 27/11568 (2017.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract

A memory device includes: a first bit line located on a dielectric layer and a second bit line located over the dielectric layer; a first word line and a second word line located between the first bit line and the second bit line; a source line located between the first word line and the second word line; a channel pillar penetrating through the first word line and the source line and the second word line, and being connected to the first bit line, the source line and the second bit line; and a charge storage structure including an upper portion surrounding an upper sidewall of the channel pillar and located between the second word line and the channel pillar; and a lower portion surrounding a lower sidewall of the channel pillar and located between the first word line and the channel pillar.


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