The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Apr. 20, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yonghui Gao, Singapore, SG;

Yi Liu, Singapore, SG;

Guohai Zhang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/022 (2013.01); H01L 21/0206 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/31053 (2013.01); H01L 2224/8302 (2013.01); H01L 2224/83022 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.


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