The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

May. 04, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Barton Lane, Austin, TX (US);

Peter Ventzek, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/321 (2013.01); H01J 37/32091 (2013.01); H01J 37/32201 (2013.01); H01J 2237/327 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01); H01J 2237/3344 (2013.01); H01L 21/67069 (2013.01);
Abstract

Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.


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